Attributes

Key Value
@Ic (A)100u
@VCE (test) (V)6.0
CaseTO18
Derate (Amb) (W/?C)800u
Forward Current Transfe.250
hfe160
Ic Max. (A)30m
Icbo Max. @Vcb Max. (A)100n
ManufacturerHitachi
Max. Operating Junction.175 ?C
Max. PD (W)100m
Maximum Collector Curre.0.03 A
Maximum Collector Power.0.1 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.6 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-12
PolarityNPN
SKU590854
Surface Mounted Yes/NoNO
Transition Frequency (f.150 MHz
TypeTransistor Silicon NPN
Vbr CBO40
Vbr CEO30
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