| @Ic (test) (A) | 1.0m |
| @VCE (test) | 10 |
| Case | TO39 |
| Derate Above 25?C | 5.3m |
| Forward Current Transfer Ratio (hFE), MIN | 3000 |
| Ic Max. (A) | 500m |
| Icbo Max. @Vcb Max. (A) | 100u |
| Manufacturer | Hitachi |
| Mat. | Silicon Logic |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 800m |
| Maximum Collector Current |Ic max| | 0.4 A |
| Maximum Collector Power Dissipation (Pc) | 0.8 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 70 V |
| Maximum Emitter-Base Voltage |Veb| | 7 V |
| Min hFE | 1.0k |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | 3-36 |
| Polarity | NPN |
| R(sat) (?) | 8.0 |
| SKU | 590855 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 600n-+ |
| Tr Max. (s) | 100n- |
| Type | Transistor Silicon NPN |
| Vbr CEO | 100 |