Attributes

Key Value
@Ic (test) (A)1.5
@VCE (test)1.5
CaseTO220
Derate Above 25?C240m
Forward Current Transfe.1000
Ic Max. (A)3.0
Icbo Max. @Vcb Max. (A)200u
ManufacturerHitachi
Mat.Silicon Logic
Max. Operating Junction.150 ?C
Max. PD (W)30
Maximum Collector Curre.3 A
Maximum Collector Power.30 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.7 V
Min hFE1.0k
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-37
PolarityNPN
R(sat) (?)480m
SKU343845
Surface Mounted Yes/NoNO
t(f) Max. (S)5.0u-+
Tr Max. (s)1.0u-
TypeTransistor Silicon NPN
Vbr CEO60
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