Attributes

Key Value
@Ic (test) (A)8.0
@VCE (test)2.0
CaseTO66
Derate Above 25?C400m
Forward Current Transfe.2000
Ic Max. (A)8.0
Icbo Max. @Vcb Max. (A)100u
ManufacturerHitachi
Mat.Silicon Logic
Max. Operating Junction.150 ?C
Max. PD (W)50
Maximum Collector Curre.8 A
Maximum Collector Power.50 W
Maximum Collector-Base .120 V
Maximum Collector-Emitt.120 V
Maximum Emitter-Base Vo.7 V
Min hFE1.0k
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-38
PolarityNPN
R(sat) (?)187m
SKU590860
Surface Mounted Yes/NoNO
t(f) Max. (S)7.5u-+
Tr Max. (s)1.4u-
TypeTransistor Silicon NPN
Vbr CEO120
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