Attributes

Key Value
@Ic (test) (A)4.0
@VCE (V)5.0
CaseTO3
Derate Above 25?C598m
Forward Current Transfe.3.5
Ic Max. (A)6.0
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerInchange Semiconductor .
Max. Operating Junction.125 ?C
Max. PD (W)60
Maximum Collector Curre.6 A
Maximum Collector Power.60 W
Maximum Collector-Base .800 V
Maximum Collector-Emitt.375 V
Maximum Emitter-Base Vo.7 V
Min hFE3.5
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-14
PolarityNPN
R(sat) (?)750m
SKU79937
Surface Mounted Yes/NoNO
t(f) Max. (S)600n
Trans. Freq (Hz) Min.20M
Transition Frequency (f.10 MHz
TypeTransistor Silicon NPN
Vbr CEO800
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