IPP034NE7N3 G

B00LWP5U1G

MOSFET N-channel POWER MOS (50 pieces)

MOSFET N-channel POWER MOS (50 pieces)zoom

Attributes

Key Value
Alternate Part No.726-IPP034NE7N3GXK
BrandInfineon Technologies
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.75 V
Drive Voltage (Max Rds .10V
Fall Time10 ns
FET Feature-
FET TypeN-Channel
Forward Transconductanc.150 S, 75 S
Gate Charge (Qg) (Max) .117 nC @ 10 V
Id - Continuous Drain C.100 A
Input Capacitance (Ciss.8130 pF @ 37.5 V
ManufacturerInfineon
Manufacturer Part No.IPP034NE7N3 G
Maximum Operating Tempe.+ 175 C
MfrInfineon Technologies
Minimum Operating Tempe.- 55 C
Mounting StyleThrough Hole
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Package/CaseTO-220-3
PackagingTube
Part # AliasesIPP034NE7N3GXKSA1 SP000.
Pd - Power Dissipation214 W
Power Dissipation (Max)214W (Tc)
Product CategoryMOSFET
Product StatusActive
Qg - Gate Charge88 nC
Rds On (Max) @ Id, Vgs3.4mOhm @ 100A, 10V
Rds On - Drain-Source R.3.4 mOhms
Rise Time85 ns
SeriesIPP034NE7, OptiMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
TradenameOptiMOS
Transistor PolarityN-Channel
Typical Turn-Off Delay .40 ns
Vds - Drain-Source Brea.75 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs th - Gate-Source Th.3.1 V
Vgs(th) (Max) @ Id3.8V @ 155?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Win SourceIPP034NE7N3G1.46202140Infineon Technologies1.46 @ 25
Digi-Key134885191.632519225Infineon Technologies1.6325 @ 192
HotendaH18241042.5361491Infineon Technologies2.536 @ 25
thumbzoomswatee.comIPP034NE7N3 G5.451285Infineon5.45 @ 25
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