Attributes

Key Value
Channel TypeN
ConfigurationSingle
Dimensions10.67 x 9.65 x 4.576 mm
Drain Current116 A
Drain to Source On Resi.7 m?
Drain to Source Voltage30 V
Forward Transconductance73 S
Forward Voltage, Diode1.2 V
Gate to Source Voltage?16 V
Height0.18" (4.576mm)
Input Capacitance3290 pF @ 25 V
Length0.42" (10.67mm)
Maximum Operating Tempe.+175 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .1
Number of Pins3
Package TypeD2PAK
PolarizationN-Channel
Power Dissipation180 W
Product HeaderHexfet? Power MOSFET
SeriesHEXFET Series
Temperature Operating R.-55 to +175 ?C
Total Gate Charge60 nC
Turn Off Delay Time23 ns
Turn On Delay Time11 ns
Typical Gate Charge @ V.60 nC @ 4.5 V
Voltage, Breakdown, Dra.30 V
Width0.38" (9.65mm)
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