Case | TO263 |
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25?C | 12A (Tc) |
Description | N-CHANNEL POWER MOSFET |
Detailed Description | N-Channel 600 V 12A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2 |
Digi-Key Part Number | 2156-IPB60R250CP-ND |
Drain to Source Voltage (Vdss) | 600 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
Manufacturer | Infineon - Siemens |
Manufacturer Product Number | IPB60R250CP |
Manufacturer, Mfr | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55?C ~ 150?C (TJ) |
Package | Bulk |
Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 104W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 250mOhm @ 7.8A, 10V |
Series | CoolMOS? |
SKU | 517781 |
Supplier Device Package | PG-TO263-3-2 |
Technology | MOSFET (Metal Oxide) |
Type | Transistor |
Vgs (Max) | ?20V |
Vgs(th) (Max) @ Id | 3.5V @ 520?A |