| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 42A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 91W (Tc) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 37A, 10V |
| Series | HEXFET? |
| Supplier Device Package | D-Pak |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4V @ 50?A |