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Infineon Technologies BCR133SH6327XTSA1
Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-PO

Attributes

Key ^Value
Base Product NumberBCR133S
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max), Series-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition130MHz
MfrInfineon Technologies
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Power - Max250mW
Product StatusNot For New Designs
Resistor - Base (R1), Resistor - Emitter Base (R2)10kOhms
Supplier Device PackagePG-SOT363-PO
Transistor Type2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 500?A, 10mA
Voltage - Collector Emitter Breakdown (Max)50V