Alternate Part No. | 726-BSO201SPH |
Brand, Mfr | Infineon Technologies |
Category | Discrete Semiconductor Products |
Channel Mode | Enhancement |
Configuration | Single |
Current - Continuous Drain (Id) @ 25?C | 12A (Ta) |
Drain to Source Voltage (Vdss) | 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Fall Time | 162 ns |
FET Feature | - |
FET Type, Transistor Polarity | P-Channel |
Forward Transconductance - Min | 71 S |
Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 4.5 V |
Id - Continuous Drain Current | - 14.9 A |
Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 15 V |
Manufacturer | Infineon |
Manufacturer Part No. | BSO201SP H |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Mounting Type | Surface Mount |
Operating Temperature | -55?C ~ 150?C (TJ) |
Package | Bulk |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Package/Case | DSO-8 |
Packaging | Reel |
Part # Aliases | BSO201SPHXUMA1 SP000613828 |
Part Status | Active |
Pd - Power Dissipation | 2.5 W |
Power Dissipation (Max) | 1.6W (Ta) |
Product Category | MOSFET |
Qg - Gate Charge | - 66 nC |
Rds On (Max) @ Id, Vgs | 8mOhm @ 14.9A, 4.5V |
Rds On - Drain-Source Resistance | 8 mOhms |
Rise Time, Typical Turn-Off Delay Time | 99 ns |
Series | SIPMOS?, BSO201 |
Supplier Device Package | PG-DSO-8 |
Technology | MOSFET (Metal Oxide) |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Vgs (Max) | ?12V |
Vgs - Gate-Source Breakdown Voltage | 12 V |
Vgs(th) (Max) @ Id | 1.2V @ 250?A |