Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120mA (Ta)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .0V, 10V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) .4.9 nC @ 5 V
Input Capacitance (Ciss.146 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Part StatusObsolete
Power Dissipation (Max)1.8W (Ta)
Rds On (Max) @ Id, Vgs45Ohm @ 120mA, 10V
SeriesSIPMOS?
Supplier Device PackagePG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 94?A
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