Infineon Technologies BSP171PE6327T

mpnBSP171PE6327T
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	1.9A (Ta)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	20 nC @ 10 V
Input Capacitance (Ciss.	460 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-261-4, TO-261AA
Power Dissipation (Max)	1.8W (Ta)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	300mOhm @ 1.9A, 10V
Series	SIPMOS?
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 460?A