Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 1.1A (Ta)
Drain to Source Voltage. 100V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) @ Vgs 17.2nC @ 10V
Input Capacitance (Ciss. 364pF @ 25V
Lead Free Status / RoHS. Contains lead / RoHS n.
Manufacturer Infineon Technologies
Manufacturer Part Number BSP296 E6433
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55?C ~ 150?C (TJ)
Package / Case TO-261-4, TO-261AA
Packaging Reel
Power Dissipation (Max) 1.79W (Ta)
Rds On (Max) @ Id, Vgs 700 mOhm @ 1.1A, 10V
Series SIPMOS?
Standard Package 4,000
Supplier Device Package PG-SOT223-4
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 1.8V @ 400?A
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