Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.1A (Ta)
DescriptionMOSFET N-CH 100V 1.1A S.
Detailed DescriptionN-Channel 100 V 1.1A (T.
Digi-Key Part NumberBSP296E6433-ND - Tape &.
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .17.2 nC @ 10 V
Input Capacitance (Ciss.364 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.BSP296 E6433
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Power Dissipation (Max)1.79W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs700mOhm @ 1.1A, 10V
SeriesSIPMOS?
Supplier Device PackagePG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.8V @ 400?A
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