Infineon Technologies IAUT300N08S5N011ATMA1

mpnIAUT300N08S5N011ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	410A (Tj)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	231 nC @ 10 V
Input Capacitance (Ciss.	16250 pF @ 40 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerSFN
Part Status	Active
Power Dissipation (Max)	375W (Tc)
Rds On (Max) @ Id, Vgs	1.1mOhm @ 100A, 10V
Series	OptiMOS?
Supplier Device Package	PG-HSOF-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.8V @ 275?A