Attributes

Key Value
Base Product NumberIDM10G120
Capacitance @ Vr, F29pF @ 800V, 1MHz
CategoryDiscrete Semiconductor .
Current - Average Recti.38A (DC)
Current - Reverse Leaka.62 ?A @ 12 V
Diode TypeSilicon Carbide Schottky
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature -.-55?C ~ 150?C
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Product StatusActive
Reverse Recovery Time (.0 ns
SeriesCoolSiC?+
SpeedNo Recovery Time > 500m.
Supplier Device PackagePG-TO252-2
Voltage - DC Reverse (V.1200 V
Voltage - Forward (Vf) .1.8 V @ 10 A
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