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Infineon Technologies IHW30N160R5XKSA1
Infineon Technologieszoom
Description:
INFINEON TECHNOLOGIES IHW30N160R5XKSA1 | Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3; single transisto
qty:
1
simpleSku:
MTM5MA:::IHW30N160R5XKSA1
sku:
MTM5MA::2X:IHW30N160R5XKSA1@x5
condition:
11
amzMan:
infineon technologies
HazMat:
False
DropShip:
False

Attributes

Key Value
CaseTO247-3
Collector current39A
Collector-emitter voltage1.6kV
Features of semiconductor devicesreverse conducting IGBT (RC-IGBT)
Gate charge205nC
Gate-emitter voltage?20V
Kind of packagetube
ManufacturerINFINEON TECHNOLOGIES
MountingTHT
Power dissipation131.5W
Pulsed collector current90A
Semiconductor structuresingle transistor
TechnologyTRENCHSTOP?
Turn-off time411ns
Type of transistorIGBT

IHW30N160R5XKSA1, Reverse Conducting IGBT with Monolithic Body Diode (5 Items)

IHW30N160R5XKSA1, Reverse Conducting IGBT with Monolithic Body Diode (5 Items)zoom