Infineon Technologies IMW120R007M1HXKSA1

mpnIMW120R007M1HXKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	225A (Tc)
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	15V, 18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	220 nC @ 18 V
Input Capacitance (Ciss.	9170 nF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	750W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	9.9mOhm @ 108A, 18V
Series	CoolSiC?
Supplier Device Package	PG-TO247-3
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+20V, -5V
Vgs(th) (Max) @ Id	5.2V @ 47mA