Infineon IMW120R350M1HXKSA1

B087QTMJW2

IMW120R350M1HXKSA1, SP001808376 (10 Items)

IMW120R350M1HXKSA1, SP001808376 (10 Items)zoom

Attributes

Key Value
Base Product NumberIMW120
CaseTO247
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.7A (Tc)
DescriptionSICFET N-CH 1.2KV 4.7A .
Detailed DescriptionN-Channel 1200 V 4.7A (.
Digi-Key Part NumberIMW120R350M1HXKSA1-ND
Drain current4.7A
Drain to Source Voltage.1200 V
Drain-source voltage1.2kV
Drive Voltage (Max Rds .15V, 18V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5.3 nC @ 18 V
Gate-source voltage-7...23V
Input Capacitance (Ciss.182 pF @ 800 V
Kind of channelenhanced
Kind of packageTube
ManufacturerInfineon Technologies
Manufacturer Product Nu.IMW120R350M1HXKSA1
Manufacturer Standard L.60 Weeks
MfrInfineon Technologies
MountingTHT
Mounting TypeThrough Hole
On-state resistance662m?
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Polarisationunipolar
Power dissipation30W
Power Dissipation (Max)60W (Tc)
Product StatusActive
Pulsed drain current13A
Rds On (Max) @ Id, Vgs455mOhm @ 2A, 18V
SeriesCoolSiC?
Supplier Device PackagePG-TO247-3-41
TechnologySiCFET (Silicon Carbide.
Type of transistorN-MOSFET
Vgs (Max)+23V, -7V
Vgs(th) (Max) @ Id5.7V @ 1mA

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomNewark29AH10366.72110INFINEON6.72 @ 10
Future Electronics61163437.63224010Infineon7.632 @ 240
thumbzoomDigi-Key102962017.88511420Infineon Technologies7.885 @ 10
TMEIMW120R350M1HXKSA18.23110INFINEON TECHNOLOGIES8.23 @ 10
RS Delivers222-485911.1816190Infineon11.1816 @ 10
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev