Attributes

Key Value
Base Product NumberIPA50R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .13V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .32.6 nC @ 10 V
Input Capacitance (Ciss.773 pF @ 100 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)30.4W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs280mOhm @ 4.2A, 13V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3-31
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 350?A
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