prev
Infineon Technologies IPB072N15N3GATMA1

Attributes

Key ^Value
Base Product NumberIPB072
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C100A (Tc)
Drain to Source Voltage (Vdss)150V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5470pF @ 75V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Part StatusActive
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs7.2mOhm @ 100A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 270?A