Infineon Technologies IPB120N08S404ATMA1

mpnIPB120N08S404ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPB120
Category	Discrete Semiconductor .
Current - Continuous Dr.	120A (Tc)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	95 nC @ 10 V
Input Capacitance (Ciss.	6450 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	179W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	4.1mOhm @ 100A, 10V
Series	Automotive, AEC-Q101, O.
Supplier Device Package	PG-TO263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 120?A