Infineon Technologies IPB160N04S2L03ATMA2

mpnIPB160N04S2L03ATMA2
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Current - Continuous Dr.	160A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	230 nC @ 5 V
Input Capacitance (Ciss.	6000 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package / Case	TO-263-7, D?Pak (6 Lead.
Part Status	Discontinued at Digi-Key
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 80A, 10V
Supplier Device Package	PG-TO263-7-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 250?A