Infineon Technologies IPBE65R230CFD7AATMA1

mpnIPBE65R230CFD7AATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPBE65
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	23 nC @ 10 V
Input Capacitance (Ciss.	1044 pF @ 400 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-7, D?Pak (6 Lead.
Power Dissipation (Max)	63W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	230mOhm @ 5.2A, 10V
Series	Automotive, AEC-Q101, C.
Supplier Device Package	PG-TO263-7-3-10
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 260?A