Attributes

Key Value
Base Product NumberIPD035N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.90A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .79 nC @ 4.5 V
Input Capacitance (Ciss.13000 pF @ 30 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)167W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.5mOhm @ 90A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.2V @ 93?A
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