Infineon IPD12CN10NGATMA1

B0748MG88K

INFINEON IPD12CN10NGATMA1 Single N-Channel 100 V 12.4 mOhm 49 nC OptiMOS Power Mosfet - TO-252-3 - 2500 item(s)

INFINEON IPD12CN10NGATMA1 Single N-Channel 100 V 12.4 mOhm 49 nC OptiMOS Power Mosfet - TO-252-3 - 2500 item(s)zoom

Attributes

Key Value
Base Product NumberIPD12CN10
CasePG-TO252-3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.67A (Tc)
Drain current67A
Drain to Source Voltage.100 V
Drain-source voltage100V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .65 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.4320 pF @ 50 V
Kind of channelenhanced
ManufacturerInfineon Technologies
MfrInfineon Technologies
MountingSMD
Mounting TypeSurface Mount
On-state resistance12.4m?
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Polarisationunipolar
Power dissipation125W
Power Dissipation (Max)125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs12.4mOhm @ 67A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide), O.
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 83?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18324590.65812500Infineon Technologies0.658 @ 2500
thumbzoomTMEIPD12CN10NGATMA11.121412500INFINEON TECHNOLOGIES1.1214 @ 2500
thumbzoomNewark51AH79491.1914308INFINEON1.19 @ 2500
Digi-Key57996091.614612500Infineon Technologies1.6146 @ 2500
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