Attributes

Key Value
Base Product NumberIPI037N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
DescriptionMOSFET N-CH 80V 100A TO.
Detailed DescriptionN-Channel 80 V 100A (Tc.
Digi-Key Part NumberIPI037N08N3GXKSA1-ND
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .117 nC @ 10 V
Input Capacitance (Ciss.8110 pF @ 40 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPI037N08N3GXKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)214W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.75mOhm @ 100A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 155?A
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