Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13.8A (Tc)
Drain to Source Voltage.600 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .43 nC @ 10 V
Input Capacitance (Ciss.950 pF @ 100 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)104W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
SeriesCoolMOS? C6
Supplier Device PackagePG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 430?A
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