Infineon Technologies IPI77N06S3-09

mpnIPI77N06S3-09
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	77A (Tc)
Drain to Source Voltage.	55V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	103nC @ 10V
Input Capacitance (Ciss.	5.335pF @ 25V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Part Status	Obsolete
Power Dissipation (Max)	107W (Tc)
Rds On (Max) @ Id, Vgs	9.1mOhm @ 39A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 55?A