Infineon Technologies IPN80R4K5P7ATMA1

mpnIPN80R4K5P7ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	1.5A (Tc)
Drain to Source Voltage.	800V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	4nC @ 10V
Input Capacitance (Ciss.	80pF @ 500V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-261-3
Part Status	Active
Power Dissipation (Max)	6W (Tc)
Rds On (Max) @ Id, Vgs	4.5Ohm @ 400mA, 10V
Series	CoolMOS? P7
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 20?A