Attributes

Key Value
Base Product NumberIPN80R4
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.5A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .4 nC @ 10 V
Input Capacitance (Ciss.80 pF @ 500 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Power Dissipation (Max)6W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs4.5Ohm @ 400mA, 10V
SeriesCoolMOS? P7
Supplier Device PackagePG-SOT223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 20?A
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