IPP052N06L3GXKSA1, Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube (100 Items)

mpnIPP052N06L3GXKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

IPP052N06L3GXKSA1, Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube (100 Items)

IPP052N06L3GXKSA1, Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube (100 Items)

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Model: IPP052N06L3GXKSA1
Manufacturer: Infineon

Attributes

Key	Value
Base Product Number	IPP052
Case	PG-TO220-3
Category	Discrete Semiconductor .
Current - Continuous Dr.	80A (Tc)
Description	MOSFET N-CH 60V 80A TO2.
Detailed Description	N-Channel 60 V 80A (Tc).
Digi-Key Part Number	448-IPP052N06L3GXKSA1-ND
Drain current	80A
Drain to Source Voltage.	60 V
Drain-source voltage	60V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	50 nC @ 4.5 V
Gate-source voltage	?20V
Input Capacitance (Ciss.	8400 pF @ 30 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	INFINEON TECHNOLOGIES
Manufacturer Product Nu.	IPP052N06L3GXKSA1
Manufacturer Standard L.	40 Weeks
Mfr	INFINEON TECHNOLOGIES
Mounting	THT
Mounting Type	Through Hole
On-state resistance	5.2m?
Operating Temperature	-55?C ~ 175?C (TJ)
Package	tube
Package / Case	TO-220-3
Polarisation	unipolar
Power dissipation	115W
Power Dissipation (Max)	115W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	5mOhm @ 80A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide), O.
Type of transistor	N-MOSFET
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.2V @ 58?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Future Electronics	3064728	0.846	500	100		Infineon		0.846 @ 100
	TME	IPP052N06L3GXKSA1	1.1736	1	100		INFINEON TECHNOLOGIES		1.1736 @ 100
	Newark	12AC9724	1.27	1	100		INFINEON		1.27 @ 100
	RS Delivers	857-6842	1.38	1	100		Infineon		1.38 @ 100
	Digi-Key	2081145	1.48092	1	100		Infineon Technologies		1.48092 @ 100