Infineon Technologies IPP055N08NF2SAKMA1

mpnIPP055N08NF2SAKMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPP055M
Category	Discrete Semiconductor .
Current - Continuous Dr.	18.5A (Ta), 99A (Tc)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	54 nC @ 10 V
Input Capacitance (Ciss.	2500 pF @ 40 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	3.8W (Ta), 107W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	5.5mOhm @ 60A, 10V
Series	StrongIRFET? 2
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.8V @ 55?A