Infineon Technologies IPP09N03LA

mpnIPP09N03LA
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	50A (Tc)
Drain to Source Voltage.	25V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	13nC @ 5V
Input Capacitance (Ciss.	1.642pF @ 15V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Obsolete
Power Dissipation (Max)	63W (Tc)
Rds On (Max) @ Id, Vgs	9.2mOhm @ 30A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 20?A