Attributes

Key Value
Base Product NumberIPP60R600
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
DescriptionMOSFET N-CH 650V 6A TO2.
Detailed DescriptionN-Channel 650 V 6A (Tc).
Digi-Key Part Number448-IPP60R600P7XKSA1-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .9 nC @ 10 V
Input Capacitance (Ciss.363 pF @ 400 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP60R600P7XKSA1
Manufacturer Standard L.39 Weeks
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)30W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs600mOhm @ 1.7A, 10V
SeriesCoolMOS? P7
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 80?A
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