Infineon Technologies IPS65R1K5CEAKMA1

mpnIPS65R1K5CEAKMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.1A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	10.5 nC @ 10 V
Input Capacitance (Ciss.	225 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-251-3 Stub Leads, IP.
Part Status	Obsolete
Power Dissipation (Max)	28W (Tc)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1A, 10V
Series	CoolMOS? CE
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 100?A