Attributes

Key Value
Base Product NumberIPT60R050
CategoryDiscrete Semiconductor .
Current - Continuous Dr.44A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .68 nC @ 10 V
Input Capacitance (Ciss.2670 pF @ 400 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerSFN
Part StatusActive
Power Dissipation (Max)245W (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 15.9A, 10V
SeriesCoolMOS? G7
Supplier Device PackagePG-HSOF-8-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 800?A
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