| Base Product Number | IPW65R |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 17.5A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |
| Mfr | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -40?C ~ 150?C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 151W (Tc) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Series | Automotive, AEC-Q101, CoolMOS? |
| Supplier Device Package | PG-TO247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4.5V @ 700?A |