Infineon Technologies IPW90R120C3XKSA1

mpnIPW90R120C3XKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPW90R120
Category	Discrete Semiconductor .
Current - Continuous Dr.	36A (Tc)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	270 nC @ 10 V
Input Capacitance (Ciss.	6800 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Part Status	Active
Power Dissipation (Max)	417W (Tc)
Rds On (Max) @ Id, Vgs	120mOhm @ 26A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO247-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 2.9mA