Infineon Technologies IPZ40N04S5L3R6ATMA1

mpnIPZ40N04S5L3R6ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	87A (Tj)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	32.8 nC @ 10 V
Input Capacitance (Ciss.	1966 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	58W (Tc)
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TSDSON-8-33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?16V
Vgs(th) (Max) @ Id	2V @ 21?A