Infineon Technologies IQE008N03LM5ATMA1

mpnIQE008N03LM5ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	27A (Ta), 253A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	64 nC @ 10 V
Input Capacitance (Ciss.	5700 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount, Wettable.
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs	850?Ohm @ 20A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?16V
Vgs(th) (Max) @ Id	2V @ 250?A