Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 110A (Tc)
Drain to Source Voltage. 20V
Drive Voltage (Max Rds . 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 44nC @ 4.5V
Input Capacitance (Ciss. 2980pF @ 10V
Lead Free Status / RoHS. Contains lead / RoHS n.
Manufacturer Infineon Technologies
Manufacturer Part Number IRF3711
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55?C ~ 150?C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Series HEXFET?
Standard Package 50
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
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