Infineon Technologies IRF3717

mpnIRF3717
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	20A (Ta)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	33 nC @ 4.5 V
Input Capacitance (Ciss.	2890 pF @ 10 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	8-SOIC (0.154", 3.90mm .
Part Status	Obsolete
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	4.4mOhm @ 20A, 10V
Series	HEXFET?
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.45V @ 250?A