Infineon Technologies IRF6706S2TRPBF

mpnIRF6706S2TRPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	17A (Ta), 63A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20 nC @ 4.5 V
Input Capacitance (Ciss.	1810 pF @ 13 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	DirectFET? Isometric S1
Part Status	Obsolete
Power Dissipation (Max)	1.8W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs	3.8mOhm @ 17A, 10V
Series	HEXFET?
Supplier Device Package	DirectFET? Isometric S1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.35V @ 25?A