Infineon Technologies IRF6720S2TRPBF

mpnIRF6720S2TRPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Ta), 35A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	12 nC @ 4.5 V
Input Capacitance (Ciss.	1140 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	DirectFET? Isometric S1
Power Dissipation (Max)	1.7W (Ta), 17W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	8mOhm @ 11A, 10V
Series	HEXFET?
Supplier Device Package	DirectFET? Isometric S1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.35V @ 25?A