Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.6A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET FeatureSchottky Diode (Isolate.
FET TypeP-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Input Capacitance (Ciss.440 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusObsolete
Power Dissipation (Max)2W (Ta)
Rds On (Max) @ Id, Vgs100mOhm @ 1.8A, 10V
SeriesFETKY?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 250?A
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