Infineon Technologies IRF7759L2TR1PBF

mpnIRF7759L2TR1PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	26A (Ta), 375A (Tc)
Drain to Source Voltage.	75 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	300 nC @ 10 V
Input Capacitance (Ciss.	12222 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	DirectFET? Isometric L8
Power Dissipation (Max)	3.3W (Ta), 125W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2.3mOhm @ 96A, 10V
Series	HEXFET?
Supplier Device Package	DirectFET? Isometric L8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A