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Infineon Technologies IRF8010SPBF
Description:
N-Channel 100 V 80A (Tc) 260W (Tc) Surface Mount D2PAK

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C80A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3830 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)260W (Tc)
Product StatusDiscontinued at Digi-Key
Rds On (Max) @ Id, Vgs15mOhm @ 45A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A