- mpnIRFB4227PBF
- brandname: Infineon Technologies
- manufacturername: Infineon Technologies
Infineon Mosfet, 200V, 65A, To-220Ab - IRFB4227PBF
- Brand: Infineon
- PartNumber: IRFB4227PBF
- PackageQuantity: 1
- Manufacturer: Infineon
- Label: Infineon
Attributes
| Key | Value |
|---|
| Alternate Mfr Part Numb. | 6504277 |
| Base Product Number | IRFB4227 |
| Case | TO220AB |
| Category | Discrete Semiconductor . |
| Channel Type | N |
| Configuration | Single |
| Current - Continuous Dr. | 65A (Tc), 10V |
| Description | MOSFET N-CH 200V 65A TO. |
| Detailed Description | N-Channel 200 V 65A (Tc. |
| Digi-Key Part Number | 448-IRFB4227PBF-ND |
| Dimensions | 10.66 x 4.82 x 16.51 mm |
| Drain Current | 65 A |
| Drain current | 65A |
| Drain to Source On Resi. | 24 mOhms |
| Drain to Source Voltage | 200 V |
| Drain to Source Voltage. | 200 V, 98 nC @ 10 V |
| Drain-source voltage | 200V |
| Drive Voltage (Max Rds . | 24mOhm @ 46A, 10V |
| Drive Voltage (Max Rds . | 10V |
| FET Feature | -, 330W (Tc) |
| FET Type | MOSFET (Metal Oxide), N. |
| Forward Transconductance | 49 S |
| Forward Voltage, Diode | 1.3 V |
| Gate charge | 70nC |
| Gate Charge (Qg) (Max) . | 4600 pF @ 25 V, 98 nC @. |
| Gate to Source Voltage | ? 30 V |
| Gate-source voltage | ?30V |
| Height | 0.65" (16.51mm) |
| Input Capacitance | 4600 pF @ 25 V |
| Input Capacitance (Ciss. | 4600 pF @ 25 V |
| Kind of channel | enhanced |
| Kind of package | Tube |
| Length | 0.419 in |
| Manufacturer | Infineon Technologies |
| Manufacturer Product Nu. | IRFB4227PBF |
| Manufacturer Standard L. | 26 Weeks |
| Maximum Operating Tempe. | +175 ?C |
| Mfr | Infineon Technologies |
| Minimum Operating Tempe. | -40 ?C |
| Mounting | THT |
| Mounting Type | TO-220AB, Through Hole |
| Number of Elements per . | 1 |
| Number of Pins | 3 |
| On-state resistance | 26m? |
| Operating Temperature | Through Hole, -40?C ~ 1. |
| Package | Active, Tube |
| Package / Case | 200 V, TO-220-3 |
| Package Type | TO-220AB |
| Part Status | N-Channel |
| Polarisation | unipolar |
| Polarization | N-Channel |
| Power dissipation | 190W |
| Power Dissipation | 330 W |
| Power Dissipation (Max) | -40?C ~ 175?C (TJ), 330. |
| Product Header | Hexfet? Power MOSFET |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 5V @ 250?A, 24mOhm @ 46. |
| Series | HEXFET?, Tube, HEXFET S. |
| Supplier Device Package | TO-220AB, TO-220-3 |
| Technology | 65A (Tc), HEXFET?, MOSF. |
| Temperature Operating R. | -40 to +175 ?C |
| Total Gate Charge | 70 nC |
| Turn Off Delay Time | 21 ns |
| Turn On Delay Time | 33 ns |
| Type of transistor | N-MOSFET |
| Typical Gate Charge @ V. | 70 nC @ 10 V |
| Vgs (Max) | ?30V, - |
| Vgs(th) (Max) @ Id | 5V @ 250?A, ?30V |
| Voltage, Breakdown, Dra. | 200 V |
| Width | 0 in |
All Prices
| Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|
| Avnet | 66K6432 | 2.54 | 1 | 10 | | Infineon | | 2.54 @ 10 |
 | TME | IRFB4227PBF | 2.63 | 1 | 331 | | INFINEON TECHNOLOGIES | | 2.63 @ 10 |
 | Newark | 66K6432 | 2.92 | 1 | 11377 | | INFINEON | | 2.92 @ 10 |
 | Digi-Key | 1928083 | 3.208 | 1 | 10 | | Infineon Technologies | | 3.208 @ 10 |
| RS Delivers | 650-4277 | 4.74 | 1 | 10 | | Infineon | | 4.74 @ 10 |
| us.rs-online.com | 70017362 | 5.06 | 1 | 10 | | Infineon | | 5.06 @ 10 |
| AmazonTP | B07PP4MBTP | 43.36 | 1 | 10 | 2 | Infineon Technologies | | 43.36 @ 10 |